PECVD (Plasma Enhanced Chemical Vapor Deposition)
Thin Film Solutions Ltd provides customised, reliable depositions systems for optical, engineering, decorative, photovoltaic and semiconductor applications.
​
Our RF plasma deposition systems with optional MOCVD precursor delivery and low frequency injection options provide flexibility for process implementation onto flat and non-conformal geometries for a wide variety of processes. System configurations are available with various electrode diameters to suit R & D or production.
-
Control over stoichiometry via process conditions. Heated option to 500°C with proprietary thermodynamic design to ensure substrate at temperature. Electrode separation adjustable from 100 to 250mm
-
Offers a wide range of material deposition, including: SiOx, SiNx, SiOxNy, Si3N5, SiC, a-Si:H, SiO2, Ta2O5, TiO2
-
Diamond-Like-Carbon, fully compliant with wide range of industry standard environmental/ durability tests
-
MOCVD option available
-
Self cleaning features
Electrodes
-Retrofittable electrodes
-Electrodes 100mm to 1m
-Heated electrode option
-Adjustable separation
-Auto-tune matching
-Low freq injection option
MOCVD & Gas Delivery
-Multiple gas delivery system
-Toxic/ pyrophoric gas use
-MOCVD Precursor Option
-Multiple bubbler capability
-Low maintainance
-High uniformity gas shower
Automatic Control
-Automated control system
-Automatic Pressure Control
-User friendly interface
-Datalogging
-Flexible recipe set-up
-Off-line recipe editing
Pump Options
-Various Pump Options:
Dry, turbo, toxic/
pyrophoric gas
compatible
-Wide process pressure
range: 10-6 to 10-2 mbar
Ease of Access
-Easy access to top/ bottom
electrodes
-Safe configuration for
toxic/ pyrophoric gas use
-Full safety interlocked
-Easy access for cleaning