PECVD (Plasma Enhanced Chemical Vapor Deposition)
Thin Film Solutions Ltd provides customised, reliable depositions systems for optical, engineering, decorative, photovoltaic and semiconductor applications.
Our RF plasma deposition systems with optional MOCVD precursor delivery and low frequency injection options provide flexibility for process implementation onto flat and non-conformal geometries for a wide variety of processes. System configurations are available with various electrode diameters to suit R & D or production.
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Control over stoichiometry via process conditions. Heated option to 500°C with proprietary thermodynamic design to ensure substrate at temperature. Electrode separation adjustable from 100 to 250mm
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Offers a wide range of material deposition, including: SiOx, SiNx, SiOxNy, Si3N5, SiC, a-Si:H, SiO2, Ta2O5, TiO2
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Diamond-Like-Carbon, fully compliant with wide range of industry standard environmental/ durability tests
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MOCVD option available
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Self cleaning features
Electrodes
-Retrofittable electrodes
-Electrodes 100mm to 1m
-Heated electrode option
-Adjustable separation
-Auto-tune matching
-Low freq injection option
MOCVD & Gas Delivery
-Multiple gas delivery system
-Toxic/ pyrophoric gas use
-MOCVD Precursor Option
-Multiple bubbler capability
-Low maintainance
-High uniformity gas shower
Automatic Control
-Automated control system
-Automatic Pressure Control
-User friendly interface
-Datalogging
-Flexible recipe set-up
-Off-line recipe editing
Pump Options
-Various Pump Options:
Dry, turbo, toxic/
pyrophoric gas
compatible
-Wide process pressure
range: 10-6 to 10-2 mbar
Ease of Access
-Easy access to top/ bottom
electrodes
-Safe configuration for
toxic/ pyrophoric gas use
-Full safety interlocked
-Easy access for cleaning